Model 8425 DC HMS with Cryogenic Probe Station

8400 Series Hall Systems

Advancing materials research

Featuring the latest in Lake Shore Hall measurement capabilities, the Model 8425 is ideal for a number of applied physics, electrical engineering, materials research, and product R&D applications. Measure electronic and magneto-transport properties of novel materials, including:

  • III-V semiconductors—InP, InSb, InAs, GaN, GaP, GaSb, AIN-based devices, high-electron mobility transistors (HEMTs), heterojunction bipolar transistors
  • II-VI semiconductors—CdS, CdSe, ZnS, ZnSe, ZnTe, HgCdTe
  • Elemental semiconductors—Ge, Si on insulator devices (SOI), SiC, doped diamond SiGe-based devices (HBTs and FETs)
  • High-temperature superconductors

Direct and derived measurements as a function of field and temperature

  • Hall voltage
  • IV curve measurements
  • Resistance
  • Magnetoresistance
  • Magnetotransport
  • Hall coefficient
  • Hall mobility
  • Anomalous Hall effect (AHE)
  • Carrier type/concentration/density

More information about the 8425...

The 8425 features:

  • A complete Hall effect measurement system using device probing under vacuum in a probe station
  • Supports a range of DC field Hall measurements—measure mobility on wafer-scale materials and structures as a function of temperature and field
  • DC fields to 2 T and resistances from 0.5 mΩ to 100 GΩ
  • Vary temperatures from 10 K to 400 K using closed-cycle refrigerator—no cryogen required
  • Includes intuitive 8400 Series software for easy system operation, data acquisition, and analysis
  • Supports exporting of data for multi-carrier analysis
  • 3-year standard warranty

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